王天虎

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姓名:王天虎

职称:讲师、硕导

职务:无

院系:澳门英皇赌博官方网址

研究方向:

传热传质、热电转换、储能

联系方式:

电话:010-61772277

邮箱:thwang@ncepu.edu.cn

地址:主楼G650


个人简介及主要荣誉称号:

王天虎,男,1985年生,工学博士,讲师,硕导,主要从事能源转化与存储原理的基础和应用研究。


教学与人才培养情况:

讲授本科生《热学》、《半导体物理学》;讲授研究生《储能原理与技术》;已培养硕士研究生1名,在读硕士研究生3名。


主要科研项目情况:

作为项目负责人,主持国家自然科学基金2项

国家自然科学基金面上项目. 项目名称:纳米多孔碳电极/离子液体界面离子输运特性及选择性储能机理, 批准号:51876059, 起止日期:2019.1-2022.12,主持

国家自然科学基金青年基金. 项目名称:基于离子风冷却的LED集成系统耦合建模及性能优化研究, 批准号:51406053, 起止日期:2015.1-2017.12,主持


主要获奖情况:

中国工程热物理学会青年优秀论文二等奖;澳门英皇游戏网址校长奖学金;研究生国家奖学金;北京市优秀毕业生


代表性论著:

10篇代表作:

Wang T H, Yang T F, Kao C H, Yan W M, Ghalambaz M. Paraffin core-polymer shell micro-encapsulated phase change materials and expanded graphite particles as an enhanced energy storage medium in heat exchangers. Advanced Powder Technology 31 (2020) 2421-2429. (SCI)

Wang T H, Wu H C, Meng J H, Yan W M. Optimization of a double-layered microchannel heat sink with semi-porous-ribs by multi-objective genetic algorithm. International Journal of Heat and Mass Transfer 149 (2020) 119217. (SCI)

Wang T H, Peng M, Wang X D, Yan W M. Investigation of heat transfer enhancement by electrohydrodynamics in a double-wall-heated channel. International Journal of Heat and Mass Transfer 113 (2017) 373-383. (SCI)

Wang T H, Wang Q H, Leng C, Wang X D. Parameter analysis and optimal design for two-stage thermoelectric cooler. Applied Energy 154 (2015) 1-12. (SCI)

Wang T H, Xu J L. Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer. Materials Science in Semiconductor Processing 29 (2015) 95-101. (SCI)

Wang T H, Xu J L, Wang X D. Self-heating-dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer. Chinese Science Bulletin 59 (2014) 2460-2469. (SCI)

Wang T H, Xu J L, Wang X D. Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization. Physica E: Low-dimensional Systems and Nanostructures 47 (2013) 51-58. (SCI)

Wang T H, Xu J L. Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer. Optik - International Journal for Light and Electron Optics 124 (2013) 5866-5870. (SCI)

Wang T H, Xu J L. Improved performance of InGaN light-emitting diodes with a novel sawtooth shaped electron blocking layer. Chinese Physics B 22 (2013) 088504. (SCI)

Wang T H, Xu J L. Improved efficiency droop characteristics in InGaN/GaN light-emitting diodes with a novel designed last barrier structure. Chinese Physics B 21 (2012) 128504. (SCI)


实验室:

电站设备状态监测与控制教育部重点实验室